Quantitative Strain and Compositional Studies of In x Ga1-x As Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques.
Identifieur interne : 000075 ( Main/Exploration ); précédent : 000074; suivant : 000076Quantitative Strain and Compositional Studies of In x Ga1-x As Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques.
Auteurs : RBID : pubmed:24758870Abstract
In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the In x Ga1-x As channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the In x Ga1-x As layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the In x Ga1-x As channel layer was pseudomorphically grown leading to tetragonal strain along the [001] growth direction and that the average indium content (x) in the epilayer is ~0.12. We found consistency in the results obtained using various methods of analysis.
DOI: 10.1017/S1431927614000762
PubMed: 24758870
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In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the In x Ga1-x As layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the In x Ga1-x As channel layer was pseudomorphically grown leading to tetragonal strain along the [001] growth direction and that the average indium content (x) in the epilayer is ~0.12. We found consistency in the results obtained using various methods of analysis.</div></front></TEI><pubmed><MedlineCitation Status="Publisher" Owner="NLM"><PMID Version="1">24758870</PMID><DateCreated><Year>2014</Year><Month>4</Month><Day>24</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1435-8115</ISSN><JournalIssue CitedMedium="Internet"><PubDate><Year>2014</Year><Month>Apr</Month><Day>23</Day></PubDate></JournalIssue><Title>Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada</Title><ISOAbbreviation>Microsc. Microanal.</ISOAbbreviation></Journal><ArticleTitle>Quantitative Strain and Compositional Studies of In x Ga1-x As Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques.</ArticleTitle><Pagination><MedlinePgn>1-9</MedlinePgn></Pagination><Abstract><AbstractText NlmCategory="UNLABELLED">In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the In x Ga1-x As channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the In x Ga1-x As layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the In x Ga1-x As channel layer was pseudomorphically grown leading to tetragonal strain along the [001] growth direction and that the average indium content (x) in the epilayer is ~0.12. We found consistency in the results obtained using various methods of analysis.</AbstractText></Abstract><AuthorList><Author><LastName>Sridhara Rao</LastName><ForeName>Duggi V</ForeName><Initials>DV</Initials><Affiliation>1 Defence Metallurgical Research Laboratory, DRDO, Kanchanbagh, Hyderabad 500058, India.</Affiliation></Author><Author><LastName>Sankarasubramanian</LastName><ForeName>Ramachandran</ForeName><Initials>R</Initials><Affiliation>1 Defence Metallurgical Research Laboratory, DRDO, Kanchanbagh, Hyderabad 500058, India.</Affiliation></Author><Author><LastName>Muraleedharan</LastName><ForeName>Kuttanellore</ForeName><Initials>K</Initials><Affiliation>2 Defence Research and Development Organisation, DRDO Bhawan, Rajaji Marg, New Delhi 110011, India.</Affiliation></Author><Author><LastName>Mehrtens</LastName><ForeName>Thorsten</ForeName><Initials>T</Initials><Affiliation>3 Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany.</Affiliation></Author><Author><LastName>Rosenauer</LastName><ForeName>Andreas</ForeName><Initials>A</Initials><Affiliation>3 Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany.</Affiliation></Author><Author><LastName>Banerjee</LastName><ForeName>Dipankar</ForeName><Initials>D</Initials><Affiliation>4 Department of Materials Engineering, Indian Institute of Science, Bengaluru 560012, India.</Affiliation></Author></AuthorList><Language>ENG</Language><PublicationTypeList><PublicationType>JOURNAL ARTICLE</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>4</Month><Day>23</Day></ArticleDate></Article><MedlineJournalInfo><MedlineTA>Microsc Microanal</MedlineTA><NlmUniqueID>9712707</NlmUniqueID><ISSNLinking>1431-9276</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>4</Month><Day>25</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>4</Month><Day>25</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>4</Month><Day>25</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>aheadofprint</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S1431927614000762</ArticleId><ArticleId IdType="doi">10.1017/S1431927614000762</ArticleId><ArticleId IdType="pubmed">24758870</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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